丝印：G60N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G60N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：712.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G60N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.00698 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.05189 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G60N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：712.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G60N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.00698 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.05189 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel IGBT with FRD

General Description The TSG60N100CE using proprietary trench design andadvanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.This device is well suited for the resonant or soft switching applicati

文件：431.7 Kbytes 页数：9 Pages

TSC

台湾半导体

NPT-Trench IGBT

文件：682.03 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司