丝印：G60N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G60N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.00698 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.05189 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

Special designed for convertors and power controls

文件：569.46 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

N-Channel Super Trench Power MOSFET

文件：556.96 Kbytes 页数：7 Pages

HMSEMI

华之美半导体