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G60N10K

丝印:G60N10;Package:TO-252;N-Channel Enhancement Mode Power MOSFET

Description The G60N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:712.57 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

G60N10KA

丝印:G60N10;Package:TO-252;N-Channel Enhancement Mode Power MOSFET

Description The G60N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件:1.00698 Mbytes 页数:6 Pages

GOFORD

谷峰半导体

G60N10K

100V N Channel TRENCH MOSFET

GOFORD

谷峰半导体

G60N10T

N-Channel Enhancement Mode Power MOSFET

Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:1.05189 Mbytes 页数:6 Pages

GOFORD

谷峰半导体

HM60N10D

Special designed for convertors and power controls

文件:569.46 Kbytes 页数:6 Pages

HMSEMI

华之美半导体

HMS60N10D

N-Channel Super Trench Power MOSFET

文件:556.96 Kbytes 页数:7 Pages

HMSEMI

华之美半导体

技术参数

  • Configuration:

    N channel

  • ESD:

    NO

  • VDS(min):

    90V

  • Id at 25℃(max):

    60A

  • PD(max):

    56W

  • Vgs(th)typ(V):

    1.3V

  • RDS(on)(typ)(@10V):

    22mΩ

  • RDS(on)(typ)(@4.5V):

    24mΩ

  • Qg(nC):

    111

  • Ciss:

    4118

  • Crss:

    169

供应商型号品牌批号封装库存备注价格
NK/南科功率
2025+
TO-252
986966
国产
询价
24+
N/A
69000
一级代理-主营优势-实惠价格-不悔选择
询价
FAIRCHI
06+
TO-3PL
27
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
FC
23+
TO-3P
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
22+
TO-220
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-220
8000
只做原装现货
询价
IR
23+
TO-220
7000
询价
23+
TO-220
2800
正品原装货价格低
询价
FAIRCHIL仙童
25+
TO-3PL
18000
原厂直接发货进口原装
询价
原厂
23+
TO-3PL
5000
原装正品,假一罚十
询价
更多G60N10K供应商 更新时间2025-12-14 14:01:00