丝印：G60V60DWFAG；Package：TO-247；Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode

Features • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tail-less switching current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient • Silicon carbide diode with no-reverse recover

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STMICROELECTRONICS

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