丝印：G60N04；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The G60N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：977.49 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N04；Package：DFN5X6-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G60N04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：975.14 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N04；Package：DFN5X6-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G60N04D52A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AECQ Qualified Application l Power switch l DC/DC converters

文件：1.10537 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N04；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：590.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N04；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G60N04KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：978.8 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N04；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The G60N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：977.49 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N04；Package：DFN5X6-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G60N04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：975.14 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N04；Package：DFN5X6-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G60N04D52A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AECQ Qualified Application l Power switch l DC/DC converters

文件：1.10537 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N04；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：590.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G60N04；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G60N04KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：978.8 Kbytes 页数：6 Pages

GOFORD

谷峰半导体