丝印：G60N04；Package：DFN5X6-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G60N04D52A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AECQ Qualified Application l Power switch l DC/DC converters

文件：1.10537 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

DUAL N-Channel Enhancement Mode Power MOSFET

Description The G60N04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：975.14 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

TO-264

FAIRCHILD

仙童半导体

上传：深圳市毅创腾电子科技有限公司

SOT-23-5

GMT/致新

上传：深圳市明嘉莱科技有限公司

SOT143

GMT

致新科技

上传：深圳市旺财半导体有限公司