RT9166-30PVL

Marking：G6-***；Package：SOT-23；300/600mA, Ultra-Fast Transient Response LDO Regulator

GeneralDescription TheRT9166/AseriesareCMOSlowdropoutregulatorsoptimizedforultra-fasttransientresponse.Thedevicesarecapableofsupplying300mAor600mAofoutputcurrentwithadropoutvoltageof230mVor580mVrespectively. Features •LowQuiescentCurrent(Typically220μA) •

STGW60H65DFB-4

Marking：G60H65DFB；Package：TO247-4；Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Features •Maximumjunctiontemperature:TJ=175°C •Excellentswitchingperformancethankstotheextradrivingkelvinpin •LowVCE(sat)=1.6V(typ.)@IC=60A •Minimizedtailcurrent •Tightparameterdistribution •Safeparalleling •Lowthermalresistance •Veryfastsoftrecov

STGWA60H65DFB

Marking：G60H65DFB；Package：TO-247；Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter.

STGWA60V60DF

Marking：G60V60DF；Package：TO-247；Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features •Maximumjunctiontemperature:TJ=175°C •Tail-lessswitchingoff •VCE(sat)=1.85V(typ.)@IC=60A •Tightparameterdistribution •Safeparalleling •Lowthermalresistance •Veryfastsoftrecoveryantiparalleldiode Applications •Photovoltaicinverters •Uninterr

STGWA60V60DWFAG

Marking：G60V60DWFAG；Package：TO-247；Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode

Features •AEC-Q101qualified •Maximumjunctiontemperature:TJ=175°C •VCE(sat)=1.85V(typ.)@IC=60A •Tail-lessswitchingcurrent •Tightparameterdistribution •Lowthermalresistance •PositiveVCE(sat)temperaturecoefficient •Siliconcarbidediodewithno-reverserecover

STGWT60H65F

Marking：G60H65F；Package：TO-3P；60 A, 650 V field stop trench gate IGBT

Features ■Highspeedswitching ■Tightparameterdistribution ■Safeparalleling ■Lowthermalresistance ■6μsshort-circuitwithstandtime ■Leadfreepackage Applications ■Photovoltaicinverters ■Uninterruptiblepowersupply ■Welding ■Powerfactorcorrection ■Highswitching

UPG2415T6X-E2

Marking：G6E；Package：TSON；GaAs INTEGRATED CIRCUIT

FEATURES •Switchcontrolvoltage:Vcont(H)=3.0VTYP. :Vcont(L)=0VTYP. •Lowinsertionloss:Lins=0.45dBTYP.@f=2.5GHz :Lins=0.55dBTYP.@f=6.0GHz •Highisolation:ISL=28dBTYP.@f=2.5GHz :ISL=26dBTYP.@f=6.0GHz •Handlingpower:Pin(0.1dB)=

UPG2415T6X-E2-A

Marking：G6E；Package：TSON；GaAs INTEGRATED CIRCUIT

FEATURES •Switchcontrolvoltage:Vcont(H)=3.0VTYP. :Vcont(L)=0VTYP. •Lowinsertionloss:Lins=0.45dBTYP.@f=2.5GHz :Lins=0.55dBTYP.@f=6.0GHz •Highisolation:ISL=28dBTYP.@f=2.5GHz :ISL=26dBTYP.@f=6.0GHz •Handlingpower:Pin(0.1dB)=

UPG2415TK-E2

Marking：G6D；Package：PKG；GaAs INTEGRATED CIRCUIT

FEATURES •Switchcontrolvoltage:Vcont(H)=3.0VTYP. :Vcont(L)=0VTYP. •Lowinsertionloss:Lins=0.45dBTYP.@f=2.5GHz :Lins=0.65dBTYP.@f=6.0GHz •Highisolation:ISL=28dBTYP.@f=2.5GHz :ISL=26dBTYP.@f=6.0GHz •Handlingpower:Pin(0.1dB)=

UPG2415TK-E2-A

Marking：G6D；Package：PKG；GaAs INTEGRATED CIRCUIT

FEATURES •Switchcontrolvoltage:Vcont(H)=3.0VTYP. :Vcont(L)=0VTYP. •Lowinsertionloss:Lins=0.45dBTYP.@f=2.5GHz :Lins=0.65dBTYP.@f=6.0GHz •Highisolation:ISL=28dBTYP.@f=2.5GHz :ISL=26dBTYP.@f=6.0GHz •Handlingpower:Pin(0.1dB)=