NC7SV32FHX

Marking：G6；Package：MicroPak2；TinyLogic ULP-A 2-Input OR Gate

TheNC7SV32isasingle2−InputORGateintinyfootprint packages.ThedeviceisdesignedtooperateforVCC=0.9Vto3.6V. Features •Designedfor0.9Vto3.6VVCCOperation •1.6nstPDat3.3V(Typ) •Inputs/OutputsOver−VoltageTolerantupto3.6V •IOFFSupportsPartialPower

NC7SV32L6X

Marking：G6；Package：MicroPak；TinyLogic ULP-A 2-Input OR Gate

TheNC7SV32isasingle2−InputORGateintinyfootprint packages.ThedeviceisdesignedtooperateforVCC=0.9Vto3.6V. Features •Designedfor0.9Vto3.6VVCCOperation •1.6nstPDat3.3V(Typ) •Inputs/OutputsOver−VoltageTolerantupto3.6V •IOFFSupportsPartialPower

NX6008NBKS

Marking：G6；Package：SOT363；60 V, dual N-channel Trench MOSFET

description DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETtechnology •ElectroSta

PBSS4350PAS

Marking：G6；Package：SOT1061D；50 V, 3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsatDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350PAS 2.Featuresandbenefits •DFN2020D-3(SOT1061D)package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapabili

PBSS4350PAS-Q

Marking：G6；Package：SOT1061D；50 V, 3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsatDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350PAS-Q 2.Featuresandbenefits •DFN2020D-3(SOT1061D)package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapabi

PDTC144VM

Marking：G6；Package：SC-101；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PMEG2010BEV

Marking：G6；Package：SOT666；1 A very low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotection,encapsulatedinaSOT666ultrasmallandflatleadSurface MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Forwardcur

PMEG2010BEV

Marking：G6；Package：SOD323；1 A very low VF MEGA Schottky barrier rectifier

FEATURES •Forwardcurrent:1A •Reversevoltages:20V,30V,40V •Verylowforwardvoltage •UltrasmallandverysmallplasticSMDpackage •PowerdissipationcomparabletoSOT23. APPLICATIONS •HighefficiencyDC-to-DCconversion •Voltageclamping •Protectioncircuits •Lowvolt

PMEG4010CEGW-Q

Marking：G6；Package：SOD123；40 V, 1 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierdioderectifierwithanintegratedguardringforstressprotection, encapsulatedinanSOD123smallSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Forwardcurrent:IF≤1A •Reversevoltage:VR≤40V •Lowforward

PTVS100VP1BPL

Marking：G6；Package：CFP5-FL；600 W Transient Voltage Suppressor

1.Generaldescription 600Wbi-directionalTransientVoltageSuppressor(TVS)inaCFP5-FL(SOD128FL)smallandflat leadSurface-MountedDevice(SMD)plasticpackage,designedfortransientvoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepowerat10/1000μswaveform:PPPM=