首页 >G4IBC20UD>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •VeryLow1.66Vvotagedrop •2.5kV,60sinsulationvoltage •4.8mmcreapagedistancetoheatsink •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •IGBTco-packagedwithHEXFREDTMultrafast, ultrasoftrecovery | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •VeryLow1.66Vvotagedrop •2.5kV,60sinsulationvoltage •4.8mmcreapagedistancetoheatsink •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •IGBTco-packagedwithHEXFREDTMultrafast,ultrasoftrecoveryantiparallel | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Highswitchingspeedoptimizedforupto25kHz withlowVCE(on) •ShortCircuitRating10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration •IGBTco-packagedwithHEXFREDTMultrafast, | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Highswitchingspeedoptimizedforupto25kHz withlowVCE(on) •ShortCircuitRating10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration •IGBTco-packagedwithHEXFREDTMultrafast, | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •2.5kV,60sinsulationvoltage •4.8mmcreapagedistancetoheatsink •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •IGBTco-packagedwithHEXFREDTMultrafast, ultrasoftrecoveryantiparalleldiodes •Tighte | IRF International Rectifier | IRF | ||
2.5kV,60sinsulationvoltage | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •2.5kV,60sinsulationvoltage •4.8mmcreapagedistancetoheatsink •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •IGBTco-packagedwithHEXFREDTMultrafast, ultrasoftrecoveryantiparalleldiodes •Tighte | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •DesignedexpresslyforSwitch-ModePower SupplyandPFC(powerfactorcorrection) applications •2.5kV,60sinsulationvoltage •Industry-benchmarkswitchinglossesimprove efficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconduction | IRF International Rectifier | IRF |
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