INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Very Low 1.66V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery

文件：223.59 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Very Low 1.66V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel

文件：305.39 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：301.23 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：301.23 Kbytes 页数：10 Pages

IRF

600V Fast 1-8 kHz Copack IGBT in a TO-220 FullPak package

600V IGBT 与 1-8 kHz 超快、超软恢复二极管联合封装到 TO-220 FullPak 封装中 • 压降非常低为1.66V\n• 2.5kV, 60s 绝缘电压\n• 至散热器的爬电距离为 4.8 mm\n• 快速：对中等工作频率（硬开关1- 5khz，谐振模式 > - 20khz）进行了优化\n• 与 HEXFREDTM 超快、超软恢复反并联二极管联合封装的 IGBT\n• 参数分布更紧凑\n• 行业标准绝缘 TO-220 FullpakTM 封装类型\n• 无铅\n\n优势:\n• 简化装配\n• 高效率和功率密度\n• HEXFREDTM 反并联二极管将开关损耗和 EMI 降至最低;

Infineon

英飞凌

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14.3A 34W TO220FP

Infineon

英飞凌

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14.3A 34W TO220FP

Infineon

英飞凌