IRG4IBC20W分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

特性 Features

• Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)

applications

• 2.5kV, 60s insulation voltage

• Industry-benchmark switching losses improve

efficiency of all power supply topologies

• 50 reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers

tighter parameters distribution, exceptional reliability

• Industry standard Isolated TO-220 FullpakTM

outline

Benefits

• Lower switching losses allow more cost-effective

operation than power MOSFETs up to 150 kHz

(hard switched mode)

• Of particular benefit to single-ended converters and

boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier

recombination make these an excellent option for

resonant mode switching as well (up to >>300 kHz)