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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXFT30N60Q	文件：591.42 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurr	IXYS IXYS Integrated Circuits Division	IXYS
IXFT30N60X	文件：190.96 Kbytes Page：6 Pages	PreliminaryTechnicalInformation	IXYS IXYS Integrated Circuits Division	IXYS
IXFV30N60P	文件：330.12 Kbytes Page：5 Pages	PolarHVTMHiPerFETPowerMOSFETN-ChannelEnhancementMode PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features ●FastRecoverydiode ●UnclampedInductiveSwitching(UIS)rated ●Internationalstandardpackages ●Lowpackageinductance -easytodriveandtoprotect	IXYS IXYS Integrated Circuits Division	IXYS
IXFV30N60PS	文件：330.12 Kbytes Page：5 Pages	PolarHVTMHiPerFETPowerMOSFETN-ChannelEnhancementMode PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features ●FastRecoverydiode ●UnclampedInductiveSwitching(UIS)rated ●Internationalstandardpackages ●Lowpackageinductance -easytodriveandtoprotect	IXYS IXYS Integrated Circuits Division	IXYS
IXGH30N60	文件：64.75 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighspeedIGBT Features Internationalstandardpackages 2ndgenerationHDMOS™process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)	IXYS IXYS Integrated Circuits Division	IXYS
IXGH30N60A	文件：64.75 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighspeedIGBT Features Internationalstandardpackages 2ndgenerationHDMOS™process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)	IXYS IXYS Integrated Circuits Division	IXYS
IXGH30N60B	文件：53.49 Kbytes Page：2 Pages	HiPerFASTTMIGBT Features •Internationalstandardpackages JEDECTO-268surface mountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOS™process •MOSGateturn-on -drivesimplicity	IXYS IXYS Integrated Circuits Division	IXYS
IXGM30N60	文件：64.75 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighspeedIGBT Features Internationalstandardpackages 2ndgenerationHDMOS™process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)	IXYS IXYS Integrated Circuits Division	IXYS
IXGM30N60A	文件：64.75 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighspeedIGBT Features Internationalstandardpackages 2ndgenerationHDMOS™process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)	IXYS IXYS Integrated Circuits Division	IXYS
IXSH30N60	文件：241.71 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighSpeedIGBT LowVCE(sat)IGBTHighSpeedIGBT ShortCircuitSOACapability Features •Internationalstandardpackages •GuaranteedShortCircuitSOAcapability •LowVCE(sat) -forlowon-stateconductionlosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •Fast	IXYS IXYS Integrated Circuits Division	IXYS
IXSH30N60A	文件：241.71 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighSpeedIGBT LowVCE(sat)IGBTHighSpeedIGBT ShortCircuitSOACapability Features •Internationalstandardpackages •GuaranteedShortCircuitSOAcapability •LowVCE(sat) -forlowon-stateconductionlosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •Fast	IXYS IXYS Integrated Circuits Division	IXYS
IXSH30N60B	文件：131.5 Kbytes Page：4 Pages	HighSpeedIGBT HighSpeedIGBT ShortCircuitSOACapability Features ●Internationalstandardpackages ●ShortCircuitSOAcapability ●HighfrequencyIGBT ●NewgenerationHDMOSTMprocess Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersupplies	IXYS IXYS Integrated Circuits Division	IXYS
IXSH30N60C	文件：131.5 Kbytes Page：4 Pages	HighSpeedIGBT HighSpeedIGBT ShortCircuitSOACapability Features ●Internationalstandardpackages ●ShortCircuitSOAcapability ●HighfrequencyIGBT ●NewgenerationHDMOSTMprocess Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersupplies	IXYS IXYS Integrated Circuits Division	IXYS
IXSM30N60	文件：241.71 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighSpeedIGBT LowVCE(sat)IGBTHighSpeedIGBT ShortCircuitSOACapability Features •Internationalstandardpackages •GuaranteedShortCircuitSOAcapability •LowVCE(sat) -forlowon-stateconductionlosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •Fast	IXYS IXYS Integrated Circuits Division	IXYS
IXSM30N60A	文件：241.71 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighSpeedIGBT LowVCE(sat)IGBTHighSpeedIGBT ShortCircuitSOACapability Features •Internationalstandardpackages •GuaranteedShortCircuitSOAcapability •LowVCE(sat) -forlowon-stateconductionlosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •Fast	IXYS IXYS Integrated Circuits Division	IXYS
IXST30N60B	文件：131.5 Kbytes Page：4 Pages	HighSpeedIGBT HighSpeedIGBT ShortCircuitSOACapability Features ●Internationalstandardpackages ●ShortCircuitSOAcapability ●HighfrequencyIGBT ●NewgenerationHDMOSTMprocess Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersupplies	IXYS IXYS Integrated Circuits Division	IXYS
IXST30N60C	文件：131.5 Kbytes Page：4 Pages	HighSpeedIGBT HighSpeedIGBT ShortCircuitSOACapability Features ●Internationalstandardpackages ●ShortCircuitSOAcapability ●HighfrequencyIGBT ●NewgenerationHDMOSTMprocess Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersupplies	IXYS IXYS Integrated Circuits Division	IXYS
IXTH30N60P	文件：357.81 Kbytes Page：6 Pages	PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated N-ChannelEnhancementModeAvalancheRated Features lFastRecoverydiode lUnclampedInductiveSwitching(UIS)rated lInternationalstandardpackages lLowpackageinductance -easytodriveandtoprotect	IXYS IXYS Integrated Circuits Division	IXYS
IXTH30N60P	文件：372.45 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTQ30N60P	文件：357.81 Kbytes Page：6 Pages	PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated N-ChannelEnhancementModeAvalancheRated Features lFastRecoverydiode lUnclampedInductiveSwitching(UIS)rated lInternationalstandardpackages lLowpackageinductance -easytodriveandtoprotect	IXYS IXYS Integrated Circuits Division	IXYS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	G30N60功率三极管	FAIRCHILD/仙童	24+	TO 3P	155756	明嘉莱只做原装正品现货	询价
深圳兆威电子有限公司	G30N60功率三极管	INFINEON/英飞凌	23+	TO-247	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市仟禧电子有限公司	G30N60功率三极管	FAIRCHILD/仙童	22+	TO247	20000	保证原装正品,假一陪十	询价
深圳市宝隆宏业科技有限公司	G30N60功率三极管	FAIRCHILD/仙童	2122+	TO247	19990	全新原装正品现货,优势渠道可含税,假一赔十	询价
深圳庞田科技有限公司	G30N60功率三极管	FAIRCHILD/仙童	2023+	TO247	19	AI智能識别、工業、汽車、醫療方案LPC批量及配套一站	询价
深圳市科芯源微电子有限公司	G30N60功率三极管	INFINEON/英飞凌	24+	TO3P	58000	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市国宇半导体科技有限公司	G30NGA4D	FAIRCHILD/仙童	23+	TO-3P	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	G30NGA4D	FAIRCHILD/仙童	TO-3P	22+	6000	十年配单,只做原装	询价
深圳市创新迹电子有限公司	G30NGA4D	FAIRCHILD/仙童	22+	TO-3P	25000	只做原装进口现货,专注配单	询价
深圳市宏捷佳电子科技有限公司	G30NGA4D	FAIRCHILD	24+	TO-3P	12300	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价

更多G30N60功率三极管供应商更新时间2024-6-6 17:05:00

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