丝印：G17；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1589, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOSFET has low on-state resistance and excellent switching characteristics, it is suitable for

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RENESAS

瑞萨

丝印：G17；Package：PowerDI3333-8；N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features  100 Unclamped Inductive Switching, Test in Production – Ensures more reliable and robust end application  Low RDS(ON) – Ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33 of the board area o

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DIODES

美台半导体

丝印：G17；Package：PowerDI3333-8；N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features  100 Unclamped Inductive Switching, Test in Production – Ensures more reliable and robust end application  Low RDS(ON) – Ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33 of the board area o

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DIODES

美台半导体

丝印：G170P02；Package：DFN2X2-6L；P-Channel Enhancement Mode Power MOSFET

Description The G170P02D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

丝印：G170P02D；Package：DFN3X3-8LDual；DUAL P-Channel Enhancement Mode Power MOSFET

Description The G170P02D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

丝印：G170P03；Package：DFN3/3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G170P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

丝印：G170P03；Package：DFN3/3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G170P03D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

丝印：G170P03；Package：SOP-8Dual；Dual P-Channel Enhancement Mode Power MOSFET

Description The G170P03S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

丝印：G170P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G170P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

丝印：G170P06；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G170P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0138 Mbytes 页数：6 Pages

GOFORD

谷峰半导体