丝印：G170P03；Package：DFN3/3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G170P03D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：927.88 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The G170P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：656.23 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

FCLGA1150

INTEL

英特尔

上传：深圳市英科美电子有限公司

MVSILICON/山景

上传：深圳市索歌特科技有限公司