SGW15N60

Marking：G15N60；Package：TO-247-3-21；Fast IGBT in NPT-technology

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

SGW15N60

Marking：G15N60；Package：TO-247-3-21；Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

STGB15M65DF2

Marking：G15M65DF2；Package：D2PAK；Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheMseries IGBTs,whichrepresentanoptimalbalance betweeninvertersystemperformanceand efficiencywherelow-lossandshort-circuit functionalityareess

STGW15H120DF2

Marking：G15H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThesedevicesarepartoftheimprovedHseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofhighfrequencyconver

STGW15H120F2

Marking：G15H120F2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.Thesedevicesarepartoftheimproved HseriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofhighfrequency co

STGW15M120DF3

Marking：G15M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThedeviceispartoftheMseriesofIGBTs,whichrepresentanoptimumcompromiseinperformancetomaximizetheefficiencyofinvertersystemswherelow-lossandshortcircuitcapability

STGW15S120DF3

Marking：G15S120DF3；Package：TO-247；Trench gate field-stop IGBT, S series 1200 V, 15 A low drop

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheSseriesof 1200VIGBTswhichistailoredtomaximize efficiencyoflowfrequencyindustrialsystems. Furthermore,apositiveVCE(sat)temperature coeffici

STGWA15H120DF2

Marking：G15H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThesedevicesarepartoftheimprovedHseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofhighfrequencyconver

STGWA15H120F2

Marking：G15H120F2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.Thesedevicesarepartoftheimproved HseriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofhighfrequency co

STGWA15M120DF3

Marking：G15M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThedeviceispartoftheMseriesofIGBTs,whichrepresentanoptimumcompromiseinperformancetomaximizetheefficiencyofinvertersystemswherelow-lossandshortcircuitcapability