G15M

Marking：G15M；Package：SOD-123FL；Surface Mount General Purpose Rectifier G15A Through G15M

FEATURES Lowprofilepackage Idealforautomatedplacement Glasspassivatedchipjunction Switchingforgeneralpurpose Highforwardsurgecapability MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

G15N06K

Marking：G15N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG15N06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G15N10C

Marking：G15N10C；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG15N10Cusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G15P04K

Marking：G15P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG15P04Kusesadvancedtrenchtechnologytoprovide excellentR DS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application Powerswitch DC/DCconverters

MSPM0G1505SDGS28R

Marking：G1505S；Package：VSSOP；MSPM0G150x Mixed-Signal Microcontrollers

1Features •Core –Arm®32-bitCortex®-M0+CPUwithmemory protectionunit,frequencyupto80MHz •FunctionalSafetyQuality-Managed –FunctionalSafetyManualandFMEDA availabletoaidinfunctionalsafetysystem design •Operatingcharacteristics –Extendedtemperature:–40°Cupto1

MSPM0G1506SDGS28R

Marking：G1506S；Package：VSSOP；MSPM0G150x Mixed-Signal Microcontrollers

1Features •Core –Arm®32-bitCortex®-M0+CPUwithmemory protectionunit,frequencyupto80MHz •FunctionalSafetyQuality-Managed –FunctionalSafetyManualandFMEDA availabletoaidinfunctionalsafetysystem design •Operatingcharacteristics –Extendedtemperature:–40°Cupto1

MSPM0G1507SDGS28R

Marking：G1507S；Package：VSSOP；MSPM0G150x Mixed-Signal Microcontrollers

1Features •Core –Arm®32-bitCortex®-M0+CPUwithmemory protectionunit,frequencyupto80MHz •FunctionalSafetyQuality-Managed –FunctionalSafetyManualandFMEDA availabletoaidinfunctionalsafetysystem design •Operatingcharacteristics –Extendedtemperature:–40°Cupto1

SGB15N60

Marking：G15N60；Package：TO-263-3；Fast IGBT in NPT-technology

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

SGP15N60

Marking：G15N60；Package：TO-220-3-1；Fast IGBT in NPT-technology

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

SGP15N60

Marking：G15N60；Package：TO-220-3-1；Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg