G10N03S

Marking：G10N03；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description TheG10N03Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G10N10A

Marking：G10N10A；Package：TO-252；Power switching application

Description TheG10N10Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application Powerswitchingapplication Hardswitchedandhighfrequencycircuits Uninterruptiblepowersupply

G10N10AS

Marking：G10N10A；Package：SOP-8；DC/DC Primary Side Switch

Description TheG10N10ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●DC/DCPrimarySideSwitch ●Telecom/Server ●SynchronousRectification

G10N65F

Marking：G10N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lActivepowerfactorcorrection l

G10N80F

Marking：G10N80；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lLEDpowersupplies lCellPhoneC

G10P03

Marking：G10P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG10P03usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

IGP10N60T

Marking：G10T60；Package：PG-TO-220-3；Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features: VerylowVCE(sat)1.5V(typ.) MaximumJunctionTemperature175°C Shortcircuitwithstandtime5s Designedfor: -VariableSpeedDriveforwashingmachinesandairconditioners -inductioncooking -UninterruptedPowerSupply TRENCHSTOP™andFieldstoptechnologyfor60

IGQ100N120S7

Marking：G100MS7；Package：PG-TO247-3-PLUS-NN3.7；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology

Features •VCE=1200V •IC=100A •LowsaturationvoltageVCEsat=2.0VatTvj=175°C •Shortcircuitruggedness8μs •Widerangeofdv/dtcontrollability •CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/ Potentialapplications •Industrialpowersupplies

SGB10N60A

Marking：G10N60A；Package：PG-TO-263-3-2；Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

STGB10M65DF2

Marking：G10M65DF2；Package：D2PAK；Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheMseries IGBTs,whichrepresentanoptimalbalance betweeninvertersystemperformanceand efficiencywherelow-lossandshort-circuit functionalityareess