丝印：G1003A；Package：SOT23-3L；N-Channel Enhancement MOSFET

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta

文件：745.97 Kbytes 页数：6 Pages

YFWDIODE

佑风微

High density cell design for ultra low Rdson

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features ● VDSS RDS(ON)@10V (typ) ID 100V 135mΩ 5A ● High densi

文件：2.73284 Mbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：G1003B；Package：SOT-23-3；N-Channel Enhancement Mode Power MOSFET

Description The G1003B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：780.45 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G1005；Package：TO-92；PWM applications

The G1005 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. Application ● PWM applications ● Load switch ● Power management

文件：2.53766 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G1006；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G1006LE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.32 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G1007；Package：SOP-8；Power switching application

General Description The G1007 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application a nd LED b acklighting. Application ● Power switching application ● LED backlighting

文件：2.6052 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G1008B；Package：SOP-8DUAL；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G1008B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：661.96 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G100C04；Package：DFN5/6-8LDual；N and P Channel Enhancement Mode Power MOSFET

Description The G100C04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.27131 Mbytes 页数：10 Pages

GOFORD

谷峰半导体

丝印：G100N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G100N03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：766.81 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G100N03；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The G100N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：620.32 Kbytes 页数：5 Pages

GOFORD

谷峰半导体