G1003A

Marking：G1003A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description TheG1003Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G1003A

Marking：G1003A；Package：SOT23-3L；N-Channel Enhancement MOSFET

Description TheG1003Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ItisESDprotected. GeneralFeatures HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevolta

G1003A-SOT23-3L

High density cell design for ultra low Rdson

Description TheG1003AusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications.ItisESDprotected. GeneralFeatures ●VDSSRDS(ON)@10V(typ)ID 100V135mΩ5A ●Highdensi

G1003B

Marking：G1003B；Package：SOT-23-3；N-Channel Enhancement Mode Power MOSFET

Description TheG1003Busesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G1005

Marking：G1005；Package：TO-92；PWM applications

TheG1005usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. Application ●PWMapplications ●Loadswitch ●Powermanagement

G1006LE

Marking：G1006；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description TheG1006LEusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G1007

Marking：G1007；Package：SOP-8；Power switching application

GeneralDescription TheG1007combinesadvancedtrench MOSFETtechnologywithalowresistancepackageto provideextremelylowRDS(ON).Thisdeviceisidealfor powerswitchingapplicationandLEDbacklighting. Application ●Powerswitchingapplication ●LEDbacklighting

G1008B

Marking：G1008B；Package：SOP-8DUAL；DUAL N-Channel Enhancement Mode Power MOSFET

Description TheG1008Busesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G100C04D52

Marking：G100C04；Package：DFN5/6-8LDual；N and P Channel Enhancement Mode Power MOSFET

Description TheG100C04D52usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G100N03

Marking：G100N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG100N03usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters