丝印：G1；Package：SOT-753；General purpose (dual digital transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：67.33 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：G1；Package：SOT-753；General purpose (dual digital transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：70.42 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：G1；Package：SOT-753；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：463.47 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：G1；Package：SOT-753；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：463.47 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：G1；Package：SOT-23；Amplifier Transistor

Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC (max)=350mW

文件：44.78 Kbytes 页数：3 Pages

FAIRCHILD

仙童半导体

丝印：G1；Package：SOT-23；NPN General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBT5401). ● Also available in lead free version. APPLICATIONS ● Ideal for medium power amplification and switching.

文件：184.82 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：G1；Package：SOT-23；High Voltage Transistors

High Voltage Transistors FEATURE ● We declare that the material of product compliance with RoHS requirements.

文件：634.91 Kbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：G1；Package：SOT-23；NPN General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBT5401). ● Also available in lead free version. APPLICATIONS ● Ideal for medium power amplification and switching.

文件：641.41 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G1；Package：TO-236AB；NPN Silicon

NPN Silicon

文件：1.21903 Mbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：G1；Package：SOT-23；NPN Transistors

Features ● High Voltage Transistors ● Pb-Free Packages are Available

文件：567.74 Kbytes 页数：3 Pages

YFWDIODE

佑风微