丝印：G1；Package：SOT-23；NPN Transistors

Features ● High Voltage Transistors ● Pb-Free Packages are Available

文件：567.74 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：G1；Package：SOT-23；NPN Transistors

Features ● High Voltage Transistors ● Pb-Free Packages are Available

文件：567.74 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：G1；Package：SOT23；NPN high-voltage transistor

1. General description NPN high-voltage transistor in a SOT23 plastic package. 2. Features and benefits • Low current (max. 300 mA) • High voltage (max. 160 V) • AEC-Q101 qualified 3. Applications • General purpose

文件：185.26 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：g1；Package：SOD323；450W Discrete Unidirectional TVS Diode

Description The Unidirectional SD series is designed for use in electronic equipment for low speed and DC applications. It will protect any sensitive equipment from damage due to electrostatic discharge (ESD) and other transient events. The SD series can safely absorb repetitive ESD strikes at ±

文件：1.0047 Mbytes 页数：7 Pages

LITTELFUSE

力特

丝印：G1；Package：SOT-353；General purpose (dual digital transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：67.33 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：G1；Package：SOT-353；General purpose (dual digital transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：70.42 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：G1；Package：SOT-353；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：463.47 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：G1；Package：SOT-353；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：463.47 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：G1；Package：SOT-23；2SC3229

文件：177.97 Kbytes 页数：5 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

丝印：G1；Package：SOT-23；EPITAXIAL PLANAR NPN TRANSISTOR

文件：34.93 Kbytes 页数：1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司