Voltage-Controlled Attenuator Module 5 to 2000 MHz

Description The G1 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses three pin diodes to provide a non linear attenuation response across a broadband frequency range. Both TO-8 and Surface Mount pa

文件：1.79037 Mbytes 页数：3 Pages

MA-COM

丝印：G1；Package：SOT-23；NPN SILICON PLANAR VHF TRANSISTOR

PARTMARKING DETAIL - G1

文件：45.48 Kbytes 页数：1 Pages

ZETEX

丝印：G1；Package：SOT-23；EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION.

文件：125.41 Kbytes 页数：1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

丝印：G1；Package：SOT23；NPN medium frequency transistor

FEATURES •IC(max) = 25 mA •VCEO(max) = 20 V •Very low feedback capacitance (typ. 350 fF). APPLICATIONS •IF and VHF thick and thin-film circuit applications. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package.

文件：284.24 Kbytes 页数：7 Pages

NEXPERIA

安世

丝印：G1；Voltage Regulator Diodes

Features ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. ◇ Zener and surge current specification ◇ Low leakage current ◇ Excellent stability ◇ High temperature soldering guaranteed: 265℃/10 seconds, at terminals

文件：2.05751 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：G1；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. ◇ Zener and surge current specification ◇ Low leakage current ◇ Excellent stability ◇ High temperature soldering guaranteed: 265℃/10 seconds, at terminals

文件：742.14 Kbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：G1；Package：SOT-553；General purpose (dual digital transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：67.33 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：G1；Package：SOT-553；General purpose (dual digital transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：70.42 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：G1；Package：SOT-553；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：463.47 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：G1；Package：SOT-553；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：463.47 Kbytes 页数：8 Pages

ROHM

罗姆