丝印：G1007；Package：SOP-8；Power switching application

General Description The G1007 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application a nd LED b acklighting. Application ● Power switching application ● LED backlighting

文件：2.6052 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

100V N Channel TRENCH MOSFET

GOFORD

谷峰半导体

NPN SWITCHING APPLICATION)

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement to KSR2007

文件：64.959 Kbytes 页数：2 Pages

SAMSUNG

三星

Switching Application

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement to KSR2007

文件：37.32 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes)

文件：30.69 Kbytes 页数：2 Pages

RECTRON

丽正