ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The G Series is a line of miniature, versatile component level building blocks that provide up to 6kV, positive or negative, in a compact PC mount package. The isolated output is directly proportional to the input, and is linear from approximately 0.7 volts in. Excellent flter

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XPPOWER

Surface Sensor for High Rel & Aerospace

FEATURES ESCC qualified. ESCC Detail Specification No. 4006014 ESCC Part No. 400601409. Flat aluminum housing. Radiation cross linked modified fluoropolymer insulation. Operating temperature range: -60°C to + 160°C. APPLICATIONS Satellite electric motors. Monitoring of gearboxes in sat

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TEC

泰科电子

Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

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STMICROELECTRONICS

意法半导体

丝印：G10N03；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

丝印：G10N10A；Package：TO-252；Power switching application

Description The G10N10A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply

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GOFORD

谷峰半导体

丝印：G10N10A；Package：SOP-8；DC/DC Primary Side Switch

Description The G10N10AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Primary Side Switch ● Telecom/Server ● Synchronous Rectification

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GOFORD

谷峰半导体

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugg

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INFINEON

英飞凌

丝印：G10N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies. Application l Active power factor correction l

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GOFORD

谷峰半导体

丝印：G10N80；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies. Application l LED power supplies l Cell Phone C

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GOFORD

谷峰半导体

丝印：G10P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G10P03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：655.18 Kbytes 页数：6 Pages

GOFORD

谷峰半导体