FQI30N06技术资料参数批发采购仙童半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FQI30N06	文件：663.34 Kbytes Page：9 Pages	60V N-Channel MOSFET 文件：663.34 Kbytes 页数：9 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FQP30N06	文件：623.87 Kbytes Page：8 Pages	60V LOGIC N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件：623.87 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FQP30N06	文件：660.21 Kbytes Page：8 Pages	60V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件：660.21 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FQP30N06	文件：302.36 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=30A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.04Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：302.36 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多FQI30N06供应商更新时间2026-1-17 10:32:00