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FQI3P20

200V P-Channel MOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQB3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQP3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQPF3P20

QFETP-CHANNEL

FEATURES •AdvancedNewDesign •AvalancheRuggedTechnology •RuggedGateOxideTechnology •VeryLowIntrinsicCapacitances •ExcellentSwitchingCharacteristics •UnrivalledGateCharge:6.0nC(Typ.) •ExtendedSafeOperatingArea •LowerRDS(ON):2.06Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQT3P20

200VP-ChannelMOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQT3P20TF

P-ChannelQFETMOSFET-200V,-0.67A,2.7

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQU3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

KSMD3P20

200VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

KSMU3P20

200VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

MTD3P20

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-3A@TC=25℃ ·DrainSourceVoltage- :VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

详细参数

  • 型号:

    FQI3P20

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    200V P-Channel MOSFET

供应商型号品牌批号封装库存备注价格
FAIRCHILD
08+(pbfree)
TO-262
8866
询价
仙童
06+
TO-262
2500
原装
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
23+
N/A
85700
正品授权货源可靠
询价
FSC仙童
1746+
TO262
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
harris
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
FSC/ON
23+
原包装原封 □□
1000
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
询价
FAIRCHILD仙童
23+
I2PAK
10000
公司只做原装正品
询价
Fairchild/ON
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
询价
ON Semiconductor
2022+
TO-262-3,长引线,I2Pak,TO-26
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
更多FQI3P20供应商 更新时间2024-4-27 16:30:00