400V N-Channel MOSFET

Features • 4.5A, 400V, RDS(on) = 1.6Ω @VGS = 10 V • Low gate charge ( typical 10 nC) • Low Crss ( typical 7.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：714.91 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

MOSFET N-CH 400V 4.5A I2PAK

ONSEMI

安森美半导体

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

文件：695.49 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

文件：728.08 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：277.72 Kbytes 页数：2 Pages

ISC

无锡固电