零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
FQI4N90 | 900V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
4Amps,900VoltsN-CHANNELMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
4Amps,900VoltsN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
FastSwitchingSpeed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
4.0A,900VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HVMOSFamilyReport | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | |||
900VN-ChannelMOSFET-T | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | |||
900VN-ChannelMOSFET | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | |||
900VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-ChannelQFETMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.2A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
900VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
900VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
900VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
900VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
900VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
900VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
IscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
详细参数
- 型号:
FQI4N90
- 制造商:
FAIRCHILD
- 制造商全称:
Fairchild Semiconductor
- 功能描述:
900V N-Channel MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
08+(pbfree) |
TO-262(I2PAK) |
8866 |
询价 | |||
仙童 |
05+ |
TO-262 |
2500 |
原装进口 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
FAIRCHI |
21+ |
TO-262 |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
23+ |
N/A |
90650 |
正品授权货源可靠 |
询价 | |||
FSC仙童 |
1746+ |
TO262 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
FAIRC |
2020+ |
TO-262(I2PAK) |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
FAIRC |
2022+ |
TO-262(I2PAK) |
7300 |
原装现货 |
询价 | ||
FAIRC |
2105+ |
TO-262(I2PAK) |
12000 |
原装正品 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
询价 |
相关规格书
更多- FQI4N90TU
- FQI5N60CTU
- FQI7N80TU
- FQL40N50
- FQN1N50CTA
- FQNL2N50BTA
- FQP11N40C
- FQP12N60C
- FQP12P20
- FQP13N10
- FQP13N50
- FQP14N30
- FQP16N25
- FQP17N40
- FQP17P10
- FQP19N20C
- FQP20N06L
- FQP24N08
- FQP27P06
- FQP2N60C
- FQP2N90
- FQP30N06
- FQP32N20C
- FQP34N20
- FQP3N50C
- FQP3N80C
- FQP3P50
- FQP45N15V2
- FQP47P06
- FQP4N80
- FQP4P40
- FQP50N06L
- FQP5N60C
- FQP6N40C
- FQP6N60C
- FQP6N90C
- FQP7N80C
- FQP85N06
- FQP8N80C
- FQP8P10
- FQP9N90C
- FQPF10N20C
- FQPF11N40C
- FQPF11P06
- FQPF13N50CF
相关库存
更多- FQI50N06TU
- FQI7N60TU
- FQI8N60CTU
- FQL40N50F
- FQN1N60CTA
- FQP10N20C
- FQP11P06
- FQP12P10
- FQP13N06L
- FQP13N10L
- FQP13N50C_G
- FQP15P12
- FQP16N25C
- FQP17P06
- FQP19N20
- FQP20N06
- FQP22N30
- FQP27N25
- FQP27P06_SW82127
- FQP2N80
- FQP2P40_F080
- FQP30N06L
- FQP33N10
- FQP3N30
- FQP3N60C
- FQP3P20
- FQP44N10
- FQP46N15
- FQP4N20L
- FQP4N90C
- FQP50N06
- FQP55N10
- FQP65N06
- FQP6N40CF
- FQP6N80C
- FQP70N10
- FQP7P06
- FQP8N60C
- FQP8N90C
- FQP9N30
- FQP9P25
- FQPF10N50CF
- FQPF11N50CF
- FQPF13N06L
- FQPF15P12