丝印：FQA9N90；Package：TO-3PN；N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω

Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

文件：2.02511 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：FQA9N90C；Package：TO-3PN；N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω

Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

文件：1.96537 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：FQA9N90；Package：TO-3PN；N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω

Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

文件：2.02511 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：FQA9N90C；Package：TO-3PN；N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω

Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

文件：1.96537 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

900V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：679.15 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

900V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：680.52 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·100 Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed swit

文件：342.14 Kbytes 页数：2 Pages

ISC

无锡固电

900V N-Channel MOSFET

文件：814.06 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

900V N-Channel MOSFET

文件：814.06 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

900V N-Channel MOSFET

文件：814.06 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司