丝印：FQD11P06；Package：D-PAK；P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：1.33089 Mbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：FQD11P06；Package：D-PAK；P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：1.33089 Mbytes 页数：11 Pages

ONSEMI

安森美半导体

60V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：615.94 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：1.18404 Mbytes 页数：9 Pages

FAIRCHILD

仙童半导体

P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：1.33089 Mbytes 页数：11 Pages

ONSEMI

安森美半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=-9.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.185Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for us

文件：353.73 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：1.18404 Mbytes 页数：9 Pages

FAIRCHILD

仙童半导体

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

文件：912.3 Kbytes 页数：4 Pages

BYCHIP

百域芯

60V P-Channel MOSFET

文件：856.8 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

P-Channel 60-V (D-S) MOSFET

文件：990.08 Kbytes 页数：8 Pages

VBSEMI

微碧半导体