Package：TO-220-3 整包；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 300V 120A 60W TO220F

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive, D

文件：367.15 Kbytes 页数：2 Pages

ISC

无锡固电

GigaMOS Power MOSFET

GigaMOS™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • High Current Handling Capability • Fast Intrinsic Diode • Avalanche Rated • Low RDS(on) Advantages • Easy to Mount • Space Savings • High Power Density A

文件：144.79 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive ·AC Motor Drives ·Battery Charges

文件：327.98 Kbytes 页数：2 Pages

ISC

无锡固电