300V, 30A PDP IGBT

文件：765.71 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 300V 46W TO220F

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=36A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 110mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and PFC Circuits..

文件：295.71 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFAST IGBT

Features • International standard package JEDEC TO-247 AD • High current handling capability • Newest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) •

文件：75.11 Kbytes 页数：4 Pages

IXYS

艾赛斯