IGBT 300V 56.8W TO220F

ONSEMI

安森美半导体

300V, 90A PDP IGBT

文件：700.37 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 300V 56.8W TO220F

ONSEMI

安森美半导体

HiPerFET Power MOSFETs

Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery

文件：125.62 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 90A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 33mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications

文件：325.19 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs Single Die MOSFET

文件：73.44 Kbytes 页数：2 Pages

IXYS

艾赛斯