600V, 7A Low Saturation IGBT CO-PAK

Description Fairchilds Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage Drop is a required feature. Features • Low saturation voltage : VCE(sat) = 1.4 V @ IC = 7A • High input imp

文件：791.85 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

600V, 7A Low Saturation IGBT CO-PAK

ONSEMI

安森美半导体

Package：TO-220-3 整包；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14A 45W TO220F

ONSEMI

安森美半导体

600V, 7A RUF IGBT CO-PAK

Description Fairchilds Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature. Features • High speed switching • Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A • High in

文件：902.05 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

600V, 7A RUF IGBT CO-PAK

Description Fairchilds Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature. Features • High speed switching • Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A • High in

文件：902.05 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

文件：4.14763 Mbytes 页数：9 Pages

FOSTER

福斯特半导体