High Input Impedance

General Description Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application Features • High Input Impedance • H

文件：210.2 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 400V 2W 8SOP

ONSEMI

安森美半导体

Strobe Flash N-Channel Logic Level IGBT

文件：112.29 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Ignition IGBT 15 Amps, 410 Volts

Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high volt

文件：81.32 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK

文件：91.6 Kbytes 页数：10 Pages

ONSEMI

安森美半导体