300V, 50A PDP IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC

文件：568.74 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 300V 46.8W TO220F

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

文件：380.61 Kbytes 页数：2 Pages

ISC

无锡固电

Advance Technical Information High Current Power MOSFET

High Current Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Eas

文件：587.08 Kbytes 页数：4 Pages

IXYS

艾赛斯

Advance Technical Information High Current Power MOSFET

High Current Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Eas

文件：587.08 Kbytes 页数：4 Pages

IXYS

艾赛斯