Advance Technical Information High Current Power MOSFET

High Current Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Eas

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IXYS

艾赛斯

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

Single N?묬hannel Power MOSFET

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PJSEMI

平晶半导体

AdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance and fast switching performance.

Simple Drive Requirement Small Size & Lower Profile RoHS Compliant & Halogen-Free

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RECTRON

丽正国际

Avalanche Rated N-channel MOSFET

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SSDI