DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

Fairchild

仙童半导体

330V, PDP IGBT

General Description Using novel trench IGBT technology, Fairchild®’s new series of trench IGBTs offer the optimum performance for consumer appliances, PDP TV and lighting applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation V

文件：320.94 Kbytes 页数：8 Pages

Fairchild

仙童半导体

330V, PDP IGBT

ONSEMI

安森美半导体

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 330V 28.4W TO220-3FP

ONSEMI

安森美半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

Fairchild

仙童半导体

Package：TO-220-3 整包；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：FGPF4533RDTU

ONSEMI

安森美半导体