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IXGP20N60B

HiPerFASTTMIGBT

IXYS

IXYS Integrated Circuits Division

IXGT20N60B

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity

IXYS

IXYS Integrated Circuits Division

IXKC20N60C

CoolMOSPowerMOSFETinISOPLUS220Package

CoolMOS™PowerMOSFETinISOPLUS220™Package ElectricallyIsolatedBackSurface N-ChannelEnhancementMode LowRDS(on),SuperjunctionMOSFET Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •

IXYS

IXYS Integrated Circuits Division

IXKC20N60C

iscN-ChannelMOSFETTransistor

•FEATURES •Highpowerdissipation •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ@VGS=10V •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverters •HighCurrentSwitchingApplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH20N60

MegaMOSFET

MegaMOS™FET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

IXTH20N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTM20N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTM20N60

MegaMOSFET

MegaMOS™FET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

JCS20N60ANH

Highefficiencyswitchmodepowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60CAH

Highefficiencyswitchmodepowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60CAH-O-CA-N-B

Highefficiencyswitchmodepowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60FH

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60FH-O-F-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60FH-O-F-N-B

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

JCS20N60FH-R-F-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60WH

Highefficiencyswitchmodepowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60WH-O-W-N-B

Highefficiencyswitchmodepowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JMP20N60A

JJWJieJie Microelectronics Co., Ltd.

捷捷微江苏捷捷微电子股份有限公司

PDF上传者:深圳市溢航科技有限公司

K20N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

KGF20N60KDA

Highspeedswitching

KECKEC CORPORATION

KEC株式会社

产品属性

  • 产品编号:

    FGP20N60UFDTU

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    管件

  • IGBT 类型:

    场截止

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.4V @ 15V,20A

  • 开关能量:

    380µJ(开),260µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    13ns/87ns

  • 测试条件:

    400V,20A,10 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220-3

  • 描述:

    IGBT 600V 40A 165W TO220

供应商型号品牌批号封装库存备注价格
ON-SEMI
21+
N/A
8800
只做原装 香港现货
询价
onsemi/安森美
新批次
TO-220
4500
询价
onsemi(安森美)
23+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
询价
ON/安森美
2410+
TO-220
12000
原装正品.假一赔百.正规渠道.原厂追溯.
询价
FAI
10
询价
Fairchild
23+
TO-3P
7750
全新原装优势
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FSC正品
22+23+
TO-220
25369
绝对原装正品全新进口深圳现货
询价
FAIRCHILD
18+
TO-220
85600
保证进口原装可开17%增值税发票
询价
Fairchild仙童
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
更多FGP20N60UFDTU供应商 更新时间2024-6-6 11:08:00