150V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(O

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Fairchild

仙童半导体

150V N-Channel PowerTrench

General Description\nThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) · 4.1 A, 150 V. Rds(on) = 78mW@ Vgs= 10V\n                      Rds(on) = 88mW@ Vgs= 6.0V\n· High performance trench technology for extremely low Rds(on)\n· High power and current handling capability\n· Fast switching, low gate charge (38nC typical)\n· FLMP SO-8 package: Enhanced thermal\nperformanc;

ONSEMI

安森美半导体

SOP-8

Fairchild

仙童半导体

上传：深圳市华斯顿科技有限公司

SO-8

MOSFET

上传：深圳市金嘉锐电子有限公司

SOP-8

ON

上传：深圳市东来宝电子科技有限公司