FDS2070N3

150V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedfor“lowside”synchronousrectifieroperation,providinganextremelylowRDS(O

FDS2070N3

150V N-Channel PowerTrench

General Description\nThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON); · 4.1 A, 150 V. Rds(on) = 78mW@ Vgs= 10V\n                      Rds(on) = 88mW@ Vgs= 6.0V\n· High performance trench technology for extremely low Rds(on)\n· High power and current handling capability\n· Fast switching, low gate charge (38nC typical)\n· FLMP SO-8 package: Enhanced thermal\nperformanc;

FDS4435

FAIRCHILD
SOP-8

FDS4435BZ

MOSFET
SO-8

FDS4559

ON
SOP-8

ON