N-Channel PowerTrench MOSFET 100V, 45A, 60mohm

Features •rDS(ON)= 50mΩ(Typ.), VGS = 10V, ID= 4.5A •Qg(tot) = 11nC (Typ.), VGS = 10V • Low Miller Charge •Low QRRBody Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) Applications • DC/DC converters and Off-Line UPS

文件：277.45 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

N 沟道，PowerTrench® MOSFET，100V，4.5A，60mΩ

N-Channel PowerTrench® MOSFET 100 V, 4.5 A, 60 mΩ •rDS(ON) = 50mΩ（典型值），VGS = 10V，ID = 4.5A\n•Qg(tot) = 11nC （典型值），VGS = 10V\n•低米勒电荷\n•低Qrr体二极管\n•优化高频率时的效率\n•UIS能力（单脉冲和重复脉冲）\n•以前的开发类型为82745;

ONSEMI

安森美半导体

N-Channel 100-V (D-S) MOSFET

Application « LED Backlighting Synchronous Rectifiers for SMPS o Power management PWM Application

文件：2.16284 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

RECTIFIER DIODE

文件：333.04 Kbytes 页数：2 Pages

GPSEMI

Electric Power Detection, Battery Energy Display

文件：962.68 Kbytes 页数：7 Pages

HOTCHIPHotchip Technology Co.,Ltd

华芯邦深圳市华芯邦科技有限公司

Off-Line CV/CC QR Flyback Switcher IC with Integrated Primary Switch, Synchronous Rectification and FluxLink Feedback

Highly Integrated, Compact Footprint • Very high efficiency across full load range • Incorporates a multi-mode Quasi-Resonant (QR) / CCM flyback controller, high-voltage switch, secondary-side sensing and synchronous rectification driver • Excellent multi-output cross regulation with weighted

文件：3.61145 Mbytes 页数：41 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司