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EMB12N10VS

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 12mΩ ID 32A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件:206.7 Kbytes 页数:5 Pages

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EMB12P03G

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.)(VGS=‐10V) 10mΩ ID ‐13A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件:186.6 Kbytes 页数:5 Pages

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EMB12P03V

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐21A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件:197.44 Kbytes 页数:5 Pages

EXCELLIANCE

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EMB12P04A

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐40V RDSON (MAX.) 12.6mΩ ID ‐25A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件:223.72 Kbytes 页数:6 Pages

EXCELLIANCE

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EMB1412

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件:370.45 Kbytes 页数:17 Pages

TI

德州仪器

EMB1412MY/NOPB

丝印:SA3B;Package:HVSSOP;EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件:370.45 Kbytes 页数:17 Pages

TI

德州仪器

EMB1412MY/NOPB.A

丝印:SA3B;Package:HVSSOP;EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件:370.45 Kbytes 页数:17 Pages

TI

德州仪器

EMB1412MY/NOPB.B

丝印:SA3B;Package:HVSSOP;EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件:370.45 Kbytes 页数:17 Pages

TI

德州仪器

EMB1412MYE/NOPB

丝印:SA3B;Package:HVSSOP;EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件:370.45 Kbytes 页数:17 Pages

TI

德州仪器

EMB1412MYE/NOPB.A

丝印:SA3B;Package:HVSSOP;EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件:370.45 Kbytes 页数:17 Pages

TI

德州仪器

技术参数

  • Channel:

    Single-N

  • BVDSS(V):

    30

  • VGS(±V):

    20

  • ID(A):

    200

  • RDS(ON)(10V) Max.(mΩ):

    1.2

  • RDS(ON)(5V) Max.(mΩ):

     

  • RDS(ON)(4.5V) Max.(mΩ):

    1.6

  • RDS(ON)(2.5V) Max.(mΩ):

     

  • Qg(10V)Typ.(nC):

    174

  • CissTyp.(pF):

    11245

供应商型号品牌批号封装库存备注价格
ROHM
24+
SOT-563
18560
假一赔十全新原装现货特价供应工厂客户可放款
询价
MICRON/美光
24+
NA
20000
美光专营原装正品
询价
EMC
24+
DFN3*3
6000
进口原装正品假一赔十,货期7-10天
询价
ROHM/罗姆
/ROHS.original
原封
22102
电子元件,供应 -正纳电子/ 元器件IC -MOS -MCU.
询价
ROHM/罗姆
23+
NA
2860
原装正品代理渠道价格优势
询价
EMC
23+
SOP-8
5500
正规渠道,只有原装!
询价
TI(德州仪器)
2447
MSOP-8
315000
1000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
TI/德州仪器
HTSSOP-28
6000
原装正品老板王磊+13925678267
询价
EMC
36118
SOT23-3
2015
专业代理MOS管,型号齐全,公司优势产品
询价
EMC
21+
QFN
1232
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查
询价
更多EMB供应商 更新时间2026-1-17 12:00:00