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EMB12N10H

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 12mΩ ID 50A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件:222.4 Kbytes 页数:6 Pages

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EMB12N10VS

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 12mΩ ID 32A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件:206.7 Kbytes 页数:5 Pages

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EMB12P03G

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.)(VGS=‐10V) 10mΩ ID ‐13A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件:186.6 Kbytes 页数:5 Pages

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EMB12P03V

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐21A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件:197.44 Kbytes 页数:5 Pages

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EMB12P04A

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐40V RDSON (MAX.) 12.6mΩ ID ‐25A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件:223.72 Kbytes 页数:6 Pages

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EMB1412

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件:370.45 Kbytes 页数:17 Pages

TI

德州仪器

EMB1412MY/NOPB

丝印:SA3B;Package:HVSSOP;EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件:370.45 Kbytes 页数:17 Pages

TI

德州仪器

EMB1412MY/NOPB.A

丝印:SA3B;Package:HVSSOP;EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件:370.45 Kbytes 页数:17 Pages

TI

德州仪器

EMB1412MY/NOPB.B

丝印:SA3B;Package:HVSSOP;EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件:370.45 Kbytes 页数:17 Pages

TI

德州仪器

EMB1412MYE/NOPB

丝印:SA3B;Package:HVSSOP;EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件:370.45 Kbytes 页数:17 Pages

TI

德州仪器

技术参数

  • Channel:

    Single-N

  • BVDSS(V):

    30

  • VGS(±V):

    20

  • ID(A):

    200

  • RDS(ON)(10V) Max.(mΩ):

    1.2

  • RDS(ON)(5V) Max.(mΩ):

     

  • RDS(ON)(4.5V) Max.(mΩ):

    1.6

  • RDS(ON)(2.5V) Max.(mΩ):

     

  • Qg(10V)Typ.(nC):

    174

  • CissTyp.(pF):

    11245

供应商型号品牌批号封装库存备注价格
INTL
05+
原厂原装
4221
只做全新原装真实现货供应
询价
EMC
13+
SOT-23
5509
原装分销
询价
EMC
36118
SOT23-3
2015
专业代理MOS管,型号齐全,公司优势产品
询价
FUJI
23+
模块
320
全新原装正品,量大可订货!可开17%增值票!价格优势!
询价
ROHM
24+
SOT363
10000
原装现货假一罚十
询价
欧派克
100
原装现货,价格优惠
询价
ROHM
2016+
EMT6
7964
只做原装,假一罚十,公司可开17%增值税发票!
询价
EMC
25+
SOP-8
4041
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
NS/TI
17+
TSSOP
6200
100%原装正品现货
询价
EMC
24+
DFN3*3
6000
进口原装正品假一赔十,货期7-10天
询价
更多EMB供应商 更新时间2025-10-11 15:45:00