P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 9mΩ ID ‐75A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：198.33 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

丝印：B10；Package：EMT6；General purpose (dual digital transistors)

Features 1) Two DTA123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Application INVERTER, INTERFACE, DRIVE

文件：73.58 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：B10；Package：EMT6；PNP -100mA -50V Complex Digital Transistors

lFeatures 1) Built-In Biasing Resistors. 2) Two DTA123J chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolat

文件：1.50031 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：B11；Package：EMT6；General purpose (dual digital transistors)

Features 1) Two DTA114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

文件：74.33 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：B11；Package：EMT6；General purpose Dual digital transistors

Features 1) Two DTA114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

文件：1.56923 Mbytes 页数：11 Pages

ROHM

罗姆

丝印：B11；Package：EMT6；PNP -100mA -50V Complex Digital Transistors

Features 1) Two DTA114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

文件：486.32 Kbytes 页数：8 Pages

ROHM

罗姆

Dual N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 11mΩ ID 12A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：202.07 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

丝印：B11；Package：SOT-563；General purpose (Dual digital transistors)

lFeatures 1)Two DTA114E chips in a EMT6 package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. lApplication INVERTER, INTERFACE, DRIVER

文件：1.28452 Mbytes 页数：7 Pages

ROHM

罗姆

General purpose (Dual digital transistors)

lFeatures 1)Two DTA114E chips in a EMT6 package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. lApplication INVERTER, INTERFACE, DRIVER

文件：1.28452 Mbytes 页数：7 Pages

ROHM

罗姆

Dual Asymmetric N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V RDSON (MAX.) 15.5mΩ 12.5mΩ ID 9A 10A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：220.41 Kbytes 页数：8 Pages

EXCELLIANCE

杰力科技