丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

EMB1428Q Switch Matrix Gate Driver

1FEATURES 2• 60V Maximum Stack Operating Voltage • Twelve (12) Floating Gate Drivers • SPI Bus Interface (for Charge/discharge Commands and Fault Reporting) • Low Power Sleep Mode • EMB1428Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (-40°C to +125°C Operating Juncti

文件：527.38 Kbytes 页数：31 Pages

TI

德州仪器

EMB1499Q Bidirectional Current DC-DC Controller

1FEATURES • 60-V Maximum Stack Operating Voltage • Bidirectional Balancing Current • Fully Synchronous Operation • Active Clamp Signal • 250-kHz Switching Frequency • Fault Detection Includes Two Separate UVLO Cells (One for Each External Supply), Primary and Secondary Side Current Limit,

文件：687.56 Kbytes 页数：27 Pages

TI

德州仪器