型号：ACDBTS1100R-HF；Package：SOD-123F；SMD Schottky Barrier Diode

Features - Low forward voltage. - Designed for mounting on small surface. - Low reverse current. - AEC-Q101 Qualified & PPAP.

文件：463.57 Kbytes 页数：4 Pages

COMCHIP

典琦

型号：CDBTS1100R-HF；Package：SOD-123F；SMD Schottky Barrier Diode

Features - Low forward voltage. - Designed for mounting on small surface. - Low reverse current.

文件：463.24 Kbytes 页数：4 Pages

COMCHIP

典琦

型号：EMB10；Package：EMT6；General purpose (dual digital transistors)

Features 1) Two DTA123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Application INVERTER, INTERFACE, DRIVE

文件：73.58 Kbytes 页数：3 Pages

ROHM

罗姆

型号：EMB10FHA；Package：EMT6；PNP -100mA -50V Complex Digital Transistors

lFeatures 1) Built-In Biasing Resistors. 2) Two DTA123J chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolat

文件：1.50031 Mbytes 页数：10 Pages

ROHM

罗姆

型号：IMB10A；Package：SOT-26；General purpose (dual digital transistors)

Features 1) Two DTA123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Application INVERTER, INTERFACE, DRIVE

文件：73.58 Kbytes 页数：3 Pages

ROHM

罗姆

型号：IMB10AFRA；Package：SMT6；PNP -100mA -50V Complex Digital Transistors

lFeatures 1) Built-In Biasing Resistors. 2) Two DTA123J chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolat

文件：1.50031 Mbytes 页数：10 Pages

ROHM

罗姆

型号：UMB10N；Package：SOT-363；General purpose (dual digital transistors)

Features 1) Two DTA123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Application INVERTER, INTERFACE, DRIVE

文件：73.58 Kbytes 页数：3 Pages

ROHM

罗姆

型号：UMB10NFHA；Package：UMT6；PNP -100mA -50V Complex Digital Transistors

lFeatures 1) Built-In Biasing Resistors. 2) Two DTA123J chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolat

文件：1.50031 Mbytes 页数：10 Pages

ROHM

罗姆

型号：EMB10；Package：EMT6；PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

文件：486.57 Kbytes 页数：8 Pages

ROHM

罗姆

型号：EMB10；Package：EMT6；General purpose (dual digital transistors)

文件：124.68 Kbytes 页数：3 Pages

ROHM

罗姆