1KSMB130A

Marking：B10F；Package：DO-214AA；Transient Voltage Suppression Diodes

1KSMB150A

Marking：B10G；Package：DO-214AA；Transient Voltage Suppression Diodes

1KSMB160A

Marking：B10H；Package：DO-214AA；Transient Voltage Suppression Diodes

1KSMB82A

Marking：B10A；Package：DO-214AA；Transient Voltage Suppression Diodes

1KSMB91A

Marking：B10B；Package：DO-214AA；Transient Voltage Suppression Diodes

2SB1068

Marking：B1068；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES LowCollectorSaturationVoltage HighDCCurrentGain HighCollectorPowerDissipation ComplementaryToThe2SD1513NPNTransistor

2SB1068-TA

Marking：B1068；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES LowCollectorSaturationVoltage HighDCCurrentGain HighCollectorPowerDissipation ComplementaryToThe2SD1513NPNTransistor

TPS6286B101VBMR

Marking：B101；Package：VQFN-HR；TPS6286Axx and TPS6286Bxx 2.4V to 5.5V Input, 6A, 8A, and 10A, Synchronous Step-Down Converter in 2mm × 3mm QFN Package With FB/I2C Interface

1Features •2.4Vto5.5Vinputvoltagerange •8mΩand8mΩinternalpowerMOSFETs •5.1μAoperatingquiescentcurrent •1.2MHzswitchingfrequency •100%dutycyclemode •0.7%outputvoltageaccuracy •ForcedPWMorpowersavemode •DCS-Controltopology(constanton-time) •FB

TTB1020B

Marking：B1020B；Package：TO-220SIS；Bipolar Transistors Silicon PNP Triple-Diffused Type

Applications •High-CurrentSwitching •HammerDrivers Features (1)HighDCcurrentgain:hFE=2000(min)(VCE=-3V,IC=-3A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-1.5V(max)(IC=-3A,IB=-6mA) (3)ComplementarytoTTD1415B

TTB1067B

Marking：B1067B；Package：TO-126N；Bipolar Transistors Silicon PNP Epitaxial Type (Darlington Transistor)

Applications •MicromotorDrivers •HammerDrivers •Switching •PowerAmplifiers Features (1)HighDCcurrentgain:hFE=2000(min)(VCE=-2V,IC=-1A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-1.5V(max)(IC=-1A,IB=-1mA) (3)ComplementarytoTTD1509B