丝印：B127；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Appl

文件：242.32 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：B127；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：300.28 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：B1274；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Wide ASO (Adoption of MBIT Process). Low Saturation Voltage. High Reliability. High Breakdown Voltage.

文件：1.3319 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

General Purpose Switching and Amplification.

FEATURES • General Purpose Switching and Amplification. • Wide ASO (Adoption of MBIT Process) • Low Saturation Voltage.

文件：104.2 Kbytes 页数：1 Pages

SECOS

喜可士

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Wide ASO (Adoption of MBIT Process). ● Low Saturation Voltage. ● High Reliability. ● High Breakdown Voltage.

文件：1.69248 Mbytes 页数：3 Pages

JIANGSU

长电科技

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications

文件：167.22 Kbytes 页数：4 Pages

ISC

无锡固电

60V/3A Low-Frequency Power Amplifier Applications

60V/3A Low-Frequency Power Amplifier Applications Applications •General power amplifier. Features • Wide ASO (Adoption of MBIT process). • Low saturation voltage. • High reliability. • High breakdown voltage. • Micaless package facilitating mounting.

文件：34.38 Kbytes 页数：4 Pages

SANYO

三洋

Silicon PNP transistor in a TO-220F Plastic Package

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features High VCEO, low saturation voltage, wide ASO. Applications Low frequency power amplifier applications.

文件：977.43 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon PNP Power Transistor

DESCRIPTION • High Reliability • Low Collector Saturation Voltage :VCE(sat)=-1.0V(Max)@Ic=-2A • Wide Area of Safe Operation APPLICATIONS • Designed for low frequency power amplifier applications.

文件：130.65 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications

文件：253.86 Kbytes 页数：4 Pages

SAVANTIC