BSS123

Marking：B123；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS100V ●ID200mA ●RDS(ON)(atVGS=10V)

BSS123

Marking：B123；Package：SOT-23；N-Channel 100-V(D-S) MOSFET

FEATURE: ●RuggedandRelaible ●HighdensitycelldesignforextremelylowRDS(on) ●SurfaceMountPackage ●VoltageControlledSmallSignalSwitch VDS(V)=100V ID=0.17A(VGS=10V) RDS(ON)

BSS123

Marking：B123；Package：SOT-23；N Channel MOSFET

FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable

UN010DN26TE

Marking：B123；Package：SOT-26；Dual N-Channel Enhancement Mode MOSFET

Features AdvancedTrenchProcessTechnology LowThresholdVoltage FastSwitchingSpeed Halogen-Free&Lead-Free Applications LoadSwitchforPortableDevices VoltageControlledSmallSignalSwitch

PJM123NSA

Marking：B123；Package：SOT-23；N- Enhancement Mode Field Effect Transistor

SMS123

Marking：B123；Package：SOT-23；N-Ch Enhancement Mode Power MOSFET

2SB1237

Marking：B1237；Package：ATV；Medium Power Transistor

MediumPowerTransistor(-32V,-1A) Features 1)LowVCE(sat). VCE(sat)=-0.2V(Typ.) (IC/IB=-500mA/-50mA) 2)Compliments2SD1664/2SD1858 Structure Epitaxialplanartype PNPsilicontransistor

BSS123K

Marking：B123KX；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

GeneralFeatures ●VDS=100V,ID=0.17A RDS(ON)

2SB1237

Marking：B1237；Package：ATV；Epitaxial Planar PNP Silicon Translstors

2SB1237

Marking：B1237；Package：ATV；Medium Power Transistor (-32V, -1A)