丝印：B123；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 100V ● ID 200mA ● RDS(ON)( at VGS=10V)

文件：594.71 Kbytes 页数：6 Pages

YANGJIE

扬州扬杰电子

丝印：B123；Package：SOT-23；N-Channel 100-V(D-S) MOSFET

FEATURE: ● Rugged and Relaible ● High density cell design for extremely low RDS(on) ● Surface Mount Package ● Voltage Controlled Small Signal Switch VDS(V)=100V ID = 0.17A (VGS =10V) RDS(ON)

文件：493.66 Kbytes 页数：3 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：B123；Package：SOT-23；N Channel MOSFET

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：937.51 Kbytes 页数：5 Pages

SY

顺烨电子

丝印：B123；Package：SOT-26；Dual N-Channel Enhancement Mode MOSFET

Features Advanced Trench Process Technology Low Threshold Voltage Fast Switching Speed Halogen-Free & Lead-Free Applications Load Switch for Portable Devices Voltage Controlled Small Signal Switch

文件：5.46728 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：B123；Package：SOT-23；N- Enhancement Mode Field Effect Transistor

文件：2.37352 Mbytes 页数：6 Pages

PJSEMI

平晶半导体

丝印：B123；Package：SOT-23；N-Ch Enhancement Mode Power MOSFET

文件：164.99 Kbytes 页数：3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

丝印：B1237；Package：ATV；Medium Power Transistor

Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor

文件：128.6 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：B123KX；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

General Features ● VDS = 100 V,ID = 0.17A RDS(ON)

文件：237.94 Kbytes 页数：6 Pages

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

丝印：B1237；Package：ATV；Epitaxial Planar PNP Silicon Translstors

文件：142.74 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：B1237；Package：ATV；Medium Power Transistor (-32V, -1A)

文件：179.26 Kbytes 页数：5 Pages

ROHM

罗姆