EMB1412MYSLASHNOPB中文资料德州仪器数据手册PDF规格书

1 Features

1• Compound CMOS and Bipolar Outputs Reduce

Output Current Variation

• 7 A Sink/3 A Source Current

• Fast Propagation Times (25 ns Typical)

• Fast Rise and Fall Times (14 ns/12 ns Rise/Fall

with 2 nF Load)

• Inverting and Non-Inverting Inputs Provide Either

Configuration with a Single Device

• Supply Rail Under-Voltage Lockout Protection

• Dedicated Input Ground (IN_REF) for Split Supply

or Single Supply Operation

• Thermally Enhanced 8-Pin VSSOP Package

• Output Swings from VCC to VEE Which can be

Negative Relative to Input Ground

2 Applications

• Li-Ion Battery Management Systems

• Hybrid and Electric Vehicles

• Grid Storage

• 48 V Systems Supply

• UPS

3 Description

The EMB1412 MOSFET gate driver provides high

peak gate drive current in 8-lead exposed-pad

VSSOP package, with improved power dissipation

required for high frequency operation. The compound

output driver stage includes MOS and bipolar

transistors operating in parallel that together sink

more than 7-A peak from capacitive loads. Combining

the unique characteristics of MOS and bipolar

devices reduces drive current variation with voltage

and temperature. Under-voltage lockout protection is

provided to prevent damage to the MOSFET due to

insufficient gate turn-on voltage. The EMB1412

provides both inverting and non-inverting inputs to

satisfy requirements for inverting and non-inverting

gate drive with a single device type.